Typical Characteristics
6
2.6
5
V GS = -4.5V
-3.5V
-3.0V
-2.5V
2.4
2.2
V GS = -2.0V
4
2
1.8
3
2
-2.0V
1.6
1.4
-2.5V
1
1.2
1
-3.0V
-3.5V
-4.5V
0
0.8
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
- I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
I D = -2.2A
V GS = -4.5V
0.35
0.3
I D = -1.1A
0.25
1.2
1
0.2
0.15
T A = 25 o C
T A = 125 o C
0.8
0.6
0.1
0.05
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation with
Temperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
T A = -55 C
5
4
V DS = -5V
o
125 o C
25 o C
10
1
V GS = 0V
T A = 125 o C
3
0.1
25 o C
2
1
0.01
0.001
-55 o C
0
0.5
1
1.5
2
2.5
3
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6392S Rev C(W)
相关PDF资料
FDC6401N MOSFET N-CH DUAL 20V SSOT-6
FDC640P_F095 MOSFET P-CH 20V 4.5A 6-SSOT
FDC6420C MOSFET N/P-CH 20V 3.0A SSOT-6
FDC642P MOSFET P-CH 20V 4A SSOT-6
FDC645N MOSFET N-CH 30V 5.5A SSOT-6
FDC6506P MOSFET P-CHAN DUAL 30V SSOT6
FDC653N MOSFET N-CH 30V 5A SSOT-6
FDC654P MOSFET P-CH 30V 3.6A SSOT-6
相关代理商/技术参数
FDC6392S_Q 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N_NL 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N_Q 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N-CUT TAPE 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6
FDC640P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC640P_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
FDC640P_F095 功能描述:MOSFET 2.5V P-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube